- 主题:微电子所的FinFET专利是怎么回事
朱慧珑
纳米器件关键工艺技术先导研究
获奖及荣誉：· IBM全公司2007年度4名牵头发明家(Leading Inventor)之一；· IBM半导体研究和开发中心2008年度的发明大师（Master Inventor）； · 2项专利获IBM杰出专利奖; · 获得IBM公司发明成就奖51次. 代表论著： 1) H. Zhu et al, “Improving Yields of High Performance 65 nm Chips with Sputtering Top Surface of Dual Stress Liner,” VLSI 2007, pp180-181 2) H. Zhu et al, “On the Control of Short Channel Effect for MOSFETs with Reverse Halo Implantation” IEEE Electron Device Lett., vol. 28, no. 2, pp168-170, 2007。 3）H. Zhu, “Modeling of Impurity Diffusion with Vacancy-Mechanism in Diamond Lattice and Si1-xGex,” Electrochemical Society Proceedings Volume 2004-07, pp. 923-934 4) H. Zhu et al, “STRUCTURE AND METHOD TO ENHANCE STRESS IN A CHANNEL OF CMOS DEVICES USING A THIN GATE”, US Patent application number: US20060160317A1 5) H. Zhu et al, “Structure and method for manufacturing planar SOI substrate with multiple orientations”, US Patent number: US7094634. 6) H.S. Yang and H. Zhu, “Method and Apparatus for Increase Strained Effect in a Transistor Channel,” US Patents: US7118999 and US7462915 7) K. Lee and H. Zhu, “Method for slowing down dopant-enhanced diffusion in substrates and devices fabricated therefrom,” US Patent: US7163867 8) B. Doris et al, “Structure and method to enhance both nFET and pFET performance using different kinds of stressed layers” US Patent Application: US20050093030A1 9) H. Zhu and R. S. Averback, "Sintering processes of two nanoparticles: a study by molecular-dynamics simulations," Phil. Mag. Lett. 73, no.1, (1996): 27-33. 10) H. Zhu et al, “Molecular-Dynamics Simulations of a 10-keV Cascade in Beta-NiAl,” Philosophical Magazine A71 735-758, 1995 承担科研项目情况：现担任“22纳米关键工艺技术先导研究与平台建设”课题首席科学家, 该项目属国家科技重大专项“极大规模集成电路制造装备及成套工艺”.
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FROM 118.123.172.*
这是抢注么
【 在 combuster 的大作中提到: 】
: 朱慧珑
: 纳米器件关键工艺技术先导研究
: 获奖及荣誉：· IBM全公司2007年度4名牵头发明家(Leading Inventor)之一；· IBM半导体研究和开发中心2008年度的发明大师（Master Inventor）； · 2项专利获IBM杰出专利奖; · 获得IBM公司发明成就奖51次. 代表论著： 1) H. Zhu et al, “Improving Yields of High Performance 65 nm Chips with Sputtering Top Surface of Dual Stress Liner,” VLSI 2007, pp180-181 2) H. Zhu et al, “On the Control of Short Channel Effect for MOSFETs with Reverse Halo Implantation” IEEE Electron Device Lett., vol. 28, no. 2, pp168-170, 2007。 3）H. Zhu, “Modeling of Impurity Diffusion with Vacancy-Mechanism in Diamond Lattice and Si1-xGex,” Electrochemical Society Proceedings Volume 2004-07, pp. 923-934 4) H. Zhu et al, “STRUCTURE AND METHOD TO ENHANCE STRESS IN A CHANNEL OF CMOS DEVICES USING A THIN GATE”, US Patent application number: US20060160317A1 5) H. Zhu et al, “Structure and method for manufacturing planar SOI substrate with multiple orientations”, US Patent number: US7094634. 6) H.S. Yang and H. Zhu, “Method and Apparatus for Increase Strained Effect in a Transistor Channel,” US Patents: US7118999 and US7462915 7) K. Lee and H. Zhu, “Method for slowing down dopant-enhanced diffusion in substrates and devices fabricated therefrom,” US Patent: US7163867 8) B. Doris et al, “Structure and method to enhance both nFET and pFET performance using different kinds of stressed layers” US Patent Application: US20050093030A1 9) H. Zhu and R. S. Averback, "Sintering processes of two nanoparticles: a study by molecular-dynamics simulations," Phil. Mag. Lett. 73, no.1, (1996): 27-33. 10) H. Zhu et al, “Molecular-Dynamics Simulations of a 10-keV Cascade in Beta-NiAl,” Philosophical Magazine A71 735-758, 1995 承担科研项目情况：现担任“22纳米关键工艺技术先导研究与平台建设”课题首席科学家, 该项目属国家科技重大专项“极大规模集成电路制造装备及成套工艺”.
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FROM 124.64.17.*
intel是真被这个专利卡住了么？
【 在 wzh176 的大作中提到: 】
: 是其中的一项结构优化
:
: #发自zSMTH@Mate 10
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FROM 124.64.17.*
还真不是
【 在 gpr 的大作中提到: 】
: 这是抢注么
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FROM 223.104.3.*