论文发表在2025年6月12日的《科学》杂志上，通讯作者是段曦东。

Gate-driven band modulation hyperdoping for high-performance p-type 2D semiconductor transistors
Science, 12 Jun 2025, Vol 388, Issue 6752, pp. 1183-1188

Editor's summary -- Phil Szuromi

Band alignment effects enable high levels of hole doping in a tungsten diselenide bilayer through its transfer of electrons into an adjacent tin disulfide monolayer. Ion implantation is often used to dope in semiconductor films, but this is difficult in few-layer transition metal dichalcogenides. Zhao et al. show that tuning of the band offset and charge transfer across the van der Waals interface with an external gate bias can produce a hole density of 1.49 x 10^14 per square centimeter, which is about five times the conventional dielectric limit.
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FROM 119.39.112.*