https://mp.weixin.qq.com/s/KzKPOCoIKwJOPgZrSIE1RgHydrodynamic Model of Semiconductors with Sonic Boundary: Structure Stability and Quasi-Neutral Limit
Hydrodynamic Model of Semiconductors with Sonic Boundary: Structure Stability and Quasi-Neutral Limit
报告人：梅茗 教授
加拿大McGill大学&Champlain学院
时 间：2023-07-04 16:00-17:00
报告地点：理学院东北楼四楼报告厅
报告摘要
This talk is concerned with the structural stability of subsonic steady states and quasi-neutral limit to one-dimensional steady hydrodynamic model of semiconductors in the form of Euler-Poisson equations with degenerate boundary, a difficult case caused by the boundary layers and degeneracy. We first prove that the subsonic steady states are structurally stable, once the perturbation of doping profile is small enough. To overcome the singularity at the sonic boundary, we introduce an optimal weight in the energy estimates. For the quadi-neutral limit, we establish a so-called convexity structure of the sequence of subsonic-sonic solutions near the boundary domains in this limit process, which efficiently overcomes the degenerate effect. On this account, we first show the strong convergence in 图片 norm with the order 图片 for the Debye length λ when the doping profile is continuous.Then we derive the uniform error estimates in 图片norm with the order when the doping profile has higher regularity. This talk is based on two recent research papers published in SIAM J. Math. Anal. (2023).
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